摘要
高纯Sn和S粉按1∶0.41%(质量分数)配比,均匀掺入9%(质量分数)的高纯Zn粉,单源共蒸发沉积薄膜后再进行热处理,得到Sn2S3∶Zn薄膜。XRD分析显示,380℃,55min热处理得到简单正交晶系的纯Sn2S3薄膜。掺Zn 9%(质量分数)的薄膜经370℃热处理15min得到的薄膜仍属简单正交晶系。掺Zn后Sn2S3薄膜的表面均匀和致密性变好,平均晶粒尺寸从未掺Zn时的35.69nm增加到58.80nm。Sn2S3薄膜的导电类型均为N型,掺Zn后薄膜的电阻率为60.5(Ω·cm),比未掺杂时降低1个数量级。Sn2S3薄膜的直接光学带隙为1.85eV,本征吸收边为551nm;Sn2S3∶Zn 9%(质量分数)薄膜的光学带隙1.41eV,本征吸收边873nm发生红移,Sn2S3薄膜的光吸收系数均达到105cm-1。
Pure Sn and S power were mixed with ratio of m （Sn） ： m （S） =1 ： 0. 41（wt%）. Then 9wt% Zn power was added and single source co-evaporation was utilized to prepare Sn2S3 ： Zn thin films. The XRD results showed that after 55rain heat-treatment, undoped Sn2S3 films, with simple orthorhombic polycrystalline, was obtained. Films, with Zn （9wt%） doped, still showed simple orthorhombic polycrystalline after 15min heattreatment. The doping increased the surface uniformity and compactness, Average grain size increased from 35.69nm （undoped） to 58. 8Ohm （doped）. Doped films showed N type behavior. The resistance rate of Zn （9wtY00） doped films decreased 1 magnitude order, which was 6.05 × 10 （Ω·cm）. Direct optical band gap of Sn2S3 film was 1.85eV. The absorption edge was 551nm; after doping Zn （gwt%）, the band gap narrowed to 1.41eV. The absorption edge was 873nm and showed red shift. The absorption coefficient was 10Scm-1.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2012年第22期3180-3184,共5页
Journal of Functional Materials
基金
内蒙古自治区自然科学基金资助项目(2009MS0109)
内蒙古自治区高等学校科技资助项目(NJ10017)
关键词
Sn2S3薄膜
Zn掺杂
单源共蒸发
热处理
电、光特性
Sn283 thin film
Zn-doped
single source co-evaporation
heat-treatment
electrical and optical properties
