摘要
FED内部真空中的电场和电子运动受到支撑结构的影响 ,为此采用了有限元法计算带有介质支撑墙的FED电场分布 ;采用龙格 库塔法计算该空间电子轨迹。并且在考虑了介质支撑墙上的二次电子发射之后 ,定性的分析了空间电场电子轨迹及墙上的电荷积累情况。得出了支撑墙对FED电子轨迹影响的数值结果 ,对器件的设计提出了建议。
The electric field and electron movement in the vacuum space of FED device are effected by the spacers. Considering the exising of the spacers. The distribution of electric field is simulated with Finite Element Method. The trajectory of electrons is given by computing with Runge Dutta Method. Meanwhile the charge accumulation upon the spacers and the change of the electric field and the trajectory of electrons are analyzed considering the secondary electron emission. The result of the effect on the trajectory from spacers is obtained and new structure of the device with the spacers is suggested.
出处
《微细加工技术》
EI
2000年第2期19-23,共5页
Microfabrication Technology
关键词
场致发射显示器
支撑墙
电场分布
电子轨迹
FED (Field Emission Display), Spacer, Secondary Electron Emission
