摘要
采用高真空直流磁控反应溅射成功地在５种基片上制备出多晶择优取向的ＡｌＮ薄膜。结果表明，５种基片均可生长（１００）面择优取向的ＡｌＮ薄膜，并且具有良好的纵向组成均匀性，表面粗造度小，晶粒均匀致密。在金属电极和 Ｓｉ片上沉积的 ＡｌＮ薄膜结晶度、取向性、衍射强度差别较小，两者的结构均优于在盖玻片上沉积的 ＡｌＮ薄膜。
Aluminum nitride thin films with(100)orientation have been successfully deposited on five kinds of substrates using DC reactive magnetron sputtering. The films have been characterized by X-ray diffraction,Auger electron spectroscops(AES)and atomic force microscope(AFM). The results show that these AlN thin films were homogeneous in vertical section, very low roughness for their surface,and had a preferred orientation with (100 ). The diffraction intensity of preferred orientation for AlN films deposited on Si substrates and Al/Si(Al/glass)substrates were generally better than that of on glass.
出处
《压电与声光》
CAS
CSCD
北大核心
2000年第4期256-258,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金!(29741004)
山西省自然科学基金联合资助项目
关键词
AIN薄膜
基片
磁控反应溅射
aluminum nitride thin films
substrates
structure
magnetron reactive sputtering
