期刊文献+

化学刻蚀制备黑硅材料的研究现状及展望 被引量:6

The Current Status and Prospects of Black Silicon Prepared by Chemical Etching
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摘要 基于黑硅材料的发展,讨论了国内外化学刻蚀制备黑硅的研究进展,包括掩膜辅助、金属离子辅助化学刻蚀。结果表明,黑硅材料的表面特殊结构能够有效降低硅表面的反射率,从而提高太阳能电池转换效率。此外,化学刻蚀法制备黑硅简便易行、成本低廉,高效可靠,具有良好的发展前景。 Based on the development of black silicon, research progress in preparation black silicon using chemical etching is discussed, including template assisted and metal assisted chemical etching. The results show that a rough surface can be fabricated easily by metal-assisted chemical etching of silicon, and the micro nano surface struc- ture of black silicon could effectively reduce the surface reflection and improve the conversion of silicon solar cells. Furthermore, metal especially noble metal assisted chemical etching is simple, feasible, inexpensive, efficient and re- liable, so it has favourable development prospects.
出处 《材料导报》 EI CAS CSCD 北大核心 2012年第21期142-147,共6页 Materials Reports
基金 国家自然科学基金(61066004 61106098 U1037604) 中国博士后科学基金(20110491758) 长江学者和创新团队发展计划
关键词 黑硅 化学刻蚀 金属催化 微纳结构 black silicon, chemical etching, metal catalysis, micro-nano structure
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参考文献54

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同被引文献42

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