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化学气相沉积法合成石墨烯的转移技术研究进展 被引量:7

Progress in Transfer Techniques of Graphene Synthesized by Chemical Vapor Deposition
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摘要 化学气相沉积(CVD)法合成石墨烯已为人们广泛研究采用。其中,如何将生长的石墨烯材料转移到与各种器件匹配的基底上是十分重要的科学问题。本文从方法、特点和结果等方面综述了由CVD法合成石墨烯的几种主要转移技术的研究进展,并对转移技术的未来做出了展望。 The growth of graphene by chemical vapour deposition(CVD) is being widely studied.The transfer of graphene grown by CVD onto a substrate for making devices is a very important area of research.In this paper,six main transfer techniques of CVD-grown graphene were analyzed.Also,the advances in the methods,characteristics and results of the transfer techniques of CVD-grown graphene were discussed.Finally,the future of transfer techniques was briefly introduced.
出处 《化学通报》 CAS CSCD 北大核心 2012年第11期974-974,共1页 Chemistry
关键词 化学气相沉积法 石墨烯 转移技术 Chemical vapor deposition Graphene Transfer techniques
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参考文献14

  • 1L Liu;M H Norman;M Lee.查看详情[J],Journal of Medicinal Chemistry2012(05):1868-1897.
  • 2M H Norman;L Liu;M Lee.查看详情[J],Journal of Medicinal Chemistry2012(05):1858-1867.
  • 3A Follenzi;S Bakovic;P Gual.查看详情[J],Oncogene2000(27):3041-3049.
  • 4P Lai;J Chien;S E Strome.查看详情[J],Oncogene2004(07):1439-1447.
  • 5P Longati;P M Comoglio;A Bardelli.查看详情[J],Current Drug Targets2001(01):41-55.
  • 6M Jeffers;S Rong;G F Woude.查看详情[J],J Mol Med(Berl)1996(09):505-513.
  • 7I Dussault;P Kaplan-Lefko;T Jun.查看详情[J],Drugs of the Future2006819-825.
  • 8J Porter.查看详情[J],Expert Opinion on Therapeutic Patents2010(02):159-177.
  • 9J L Liu;F F Wang;Z Ma.查看详情[J],International Journal of Molecular Sciences2011(02):946-970.
  • 10J L Liu;H Zhang;Z T Xiao.查看详情[J],International Journal of Molecular Sciences2011(03):1807-1835.

同被引文献174

  • 1史永胜,李雪红,宁青菊.石墨烯的制备及研究现状[J].电子元件与材料,2010,29(8):70-73. 被引量:15
  • 2Allen M J,Tung V C,Kaner R B.Honeycomb carbon:a review of graphene[J].Chemical Reviews,2010,110(1):132-145.
  • 3Novoselov K S,Geim A K,Morozov S V,et al.Electric field effect in atomically thin carbon films[J].Science,2004,306(5696):666-669.
  • 4王黎东,费维栋.高效率低成本机械剥离制备石墨烯或氧化石墨烯的方法:中国,201010179119.1[P].2010-05-21.
  • 5Zhao Weifeng,Fang Ming,Wu Furong,et al.Preparation of graphene by exfoliation of graphite using wet ball milling[J].Journal of Materials Chemistry,2010,20:5817-5819.
  • 6Berger C,Song Zhimin,Li Xuebin,et al.Electronic confinement and coherence in patterned epitaxial graphene[J].Science,2006,312(5777):1191-1196.
  • 7Berger C,Song Zhimin,Li Tianbo,et al.Ultrathin epitaxial graphite:2D electron gas properties and a route toward graphene-based nanoelectronics[J].J Phys Chem B,2004,108(52):19912-19916.
  • 8Jernigan G G,Van Mil B L,Tedesco J L,et al.Comparison of epitaxial graphene on Si-face and C-face 4H Si C formed by ultrahigh vacuum and RF furnace production[J].Nano Letter,2009,9(7):2605-2609.
  • 9Park S,Ruoff R S.Chemical methods for the production of graphenes[J].Nature Nanotechnology,2009,4(4):217-224.
  • 10Rümmeli M H,Bachmatiuk A,Scott A,et al.Direct low-temperature nanographene CVD synthesis over a dielectric insulator[J].ACS Nano,2010,4(7):4206-4210.

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