摘要
采用离子束辅助中频反应磁控溅射技术在单晶硅及YG6硬质合金基体上沉积AlN薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度计、薄膜结合强度划痕试验仪等对薄膜结构及性能进行表征,着重研究了偏压对中频反应溅射沉积AlN薄膜结构和性能的影响。研究结果表明:所制备的AlN薄膜是由AlN相和Al相组成的,偏压的增大,有利于薄膜结晶度的提高,AlN沿(100)晶面择优取向增强;同时,随着偏压的增加,所沉积的AlN薄膜致密度和膜/基结合力均显著提高,而膜层沉积速率和膜基复合硬度则呈降低的规律。
AlN thin films were deposited by mid-frequency reactive magnetron sputtering with ion beam assistance on single crystal Si and YG6 cemented carbide. Scanning electron microscope（SEM）, X-ray diffraction instrument（XRD）, micro hardness tester and scratch tester were used to investigate the structure and properties of AlN thin films. This paper mainly researched on the effects of bias on the structure and properties of AlN thin films. The results show that the AlN thin films are made up of AlN and A1 phases. With the increasing bias, the crystallinity of the AlN thin films is improved, and the AlN films show （100） preferential orientation obviously. Meanwhile, the density and adhesion strength of AlN thin films are significantly increased, but the films＇ deposition rate and hardness are reduced.
出处
《真空》
CAS
2012年第6期28-31,共4页
Vacuum
关键词
ALN薄膜
偏压
中频反应磁控溅射
离子束辅助
AlN films
bias
mid-frequency reactive magnetron sputtering
ion beam assisted
