摘要
通过对GaN/Al_xGa_(1-x)N异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因.结果表明,整个磁场范围的负磁电阻是由电子-电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正.用拟合的方法得到了电子-电子相互作用项以及平行电导层的载流子浓度和迁移率,并用不同的计算方法对拟合结果进行了验证.
The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions （EEIs）, while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correc- tion terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第23期452-456,共5页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2007CB924900)
国家自然科学基金(批准号:60906045)资助的课题~~
关键词
二维电子气
磁电阻
电子
电子相互作用
平行电导
two-dimensional electron gas, magnetoresistance, electron-electron interaction, parallel conductance
