摘要
在IGBT关断过程中,过大的du/dt和di/dt将会引起器件的过电流和过电压,从而损坏器件。为了控制IGBT的开关特性,通常在栅极串联电阻,其大小与du/dt和di/dt有直接关系。传统观点通常误认为串联电阻越大,关断过程中du/dt和di/dt越小。针对此问题,基于IGBT器件关断过程的物理机理对栅极串联电阻与du/dt和di/dt的关系进行了分析,认为对于高电压等级的IGBT器件,随着栅极电阻的增大,其di/dt变化趋势反而会增大。通过对不同电压等级的IGBT器件进行测试,发现测试结果与理论分析一致。因此,选取合适的串联电阻对IGBT的安全使用至关重要,否则有可能因为过大的du/dt或di/dt而导致器件失效。
In the shutdown process of insulated gate bipolar transistor（IGBT）, large du/dt and di/dt will cause over- current and over-voltage, thereby damaging the device.In order to control the switching characteristics of IGBT, usually resistance is connected to the gate in series, and the value of the series resistance affects the value of du/dt and di/ dtdirrectly.The traditional view often believes mistakenly that the series resistance is bigger,the di/dt and du/dt are smaller.In order to solve this problem,based on the physics mechanism of IGBT shutdown process,the relationship between the series resistance and di/dt, du/dt is analysed, and the results show that for the high voltage IGBT, with the increase of the gate resistance, the di/dt will increase.According to the test of different voltage IGBT,the results are consistent with the theory analysis.So, it＇s very important for the safety of IGBT to select the appropriate gate se- ries resistance, or it may lead to device failure due to large di/dt and du/dt.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期52-54,共3页
Power Electronics
基金
国家重大科技专项资助项目(2011ZX02603)
西安市科技计划资助项目(CXY1129(5))~~
关键词
晶体管
栅极电阻
电压变化率
电流变化率
transistor
gate resistance
change rate of voltage
change rate of current
