摘要
随着新能源应用的需求,直流变换器不断向小型化、高功率密度、低压大电流方向发展,作为直流变换器关键器件的功率金属氧化物半导体场效应晶体管,不断创新优化结构,获得更低导通电阻、更高开关速度,从而推动了与互补金属氧化物半导体制造工艺兼容的平面栅技术功率器件的发展。文章探讨了平面栅功率器件的研究进展,包括屏蔽沟道、肖特基势垒结等结构。
With the DC / DC converter moving forward into miniaturization, high power density, and low-voltage high-current for the application,the power Metal Oxide Semiconductor Field Effect Transistor as the critical switching devices of the converter, tends to be smaller on-resistance and higher switching speed by innovating and optimizing the structure, promoting the development of the planar gate power MOSFET devices, which is compatible with Complementary MOS process lines. This paper mainly discusses the research progress of the planar gate power MOSFET structure, including the shielding-channel MOSFET, the junction barrier controlled schottky FET, etc.
出处
《天津职业技术师范大学学报》
2012年第4期17-20,共4页
Journal of Tianjin University of Technology and Education
基金
天津市高等学校科技发展基金项目(20070711)
