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合金元素影响马氏体回火抗力的电子层次 被引量:4

Electron Level Investigating of the Effect of Alloying Elements on Tempering Resistance of Martensite
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摘要 本文利用"固体与分子经验电子理论"(EET)计算了马氏体相的电子结构参数,从电子层次研究了合金元素对马氏体回火抗力影响的物理本质。研究结果表明:合金元素Mn在马氏体结构单元中的最强键键能较低,对马氏体的回火抗力无明显影响;Si和Ni可以提高马氏体的回火抗力,但是提高幅度不大;W、Mo、V和Cr在α-Fe-C-M中的键能较高,可以大幅度提高合金马氏体的回火抗力,研究结果与实际吻合较好。 The electron structure parameters of martensite were calculated by employing empirical electron theory of solids and molecules (EET) in order to study the effect of alloying elements on tempering resistance of martensite. One of the results indicated that Mn almost has no effect on the tempering resistance due to the relatively low- bond energy of the strongest bond of Mn in the martensite structural elements. Si and Ni can increase the tempering resistance slightly because of the high bond energy as compared with that of Mn. Among the elements concerned, Mo, V, and Cr can increase the tempering resistance substantially. The results are in good agreement with the experiments.
出处 《材料科学与工程学报》 CAS CSCD 北大核心 2012年第6期900-903,866,共5页 Journal of Materials Science and Engineering
关键词 马氏体 回火抗力 EET 键能 martensite tempering resistance EET bond energy
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