期刊文献+

定向凝固技术中温度场调控及铸锭质量对太阳电池效率的影响

下载PDF
导出
摘要 文章主要采用少子寿命测试仪和红外光谱仪研究不同温度场对多晶硅锭质量的影响及对比分析电池效率。研究发现,在长晶开始阶段顶部、侧部和底部加热器的温度分别设定为1 440℃、1 443℃和20℃相比温度分别为1 455℃、1 443℃和20℃时得到的硅锭边角长晶更完全,外观平整,开方后晶锭晶粒较大且阴影少,少数载流子寿命较高,制作的电池离散值小,转换效率较高。
出处 《煤》 2012年第12期47-49,共3页 Coal
  • 相关文献

参考文献8

  • 1Ying-Yang Teng, Jyh-Chen Chen, Chung-Wei Lu, et al. , The Carbon Distribution in Muhicrystalline Silicon Ingot Grown Using the Directional Solidification Process [ J ]. Journal of Crystal Growth,2010(312) :1 282 - 1 290.
  • 2Hiroaki Miyazawa, Liujun Liu, Sho Hisamatsu,KoichiKakimoto, Numerical Analysis of Influence of Tilt of Crucibles on Interface Shape and Fields of Temperature and Velocity in a Unidirectional Solidification process [ J ]. Journal of Crystal Growth 2008 (310) : 1 034.
  • 3E. A. Meese, E. J. Ovrelid, H. Laux, et al.. Modelling of Directional Crystallization of Silicon Ingot-Heat Transfer and Experimental Validation [ J ]. 19 th European Photovoltaic Solar Energy Conference,2004 (7) : 7 - 11.
  • 4I. Steinbachl. Numerrical Simulations for Silicon Crystallization Process-examples from Ingot and Ribbon Casting [ J ]. Solar Energy Materials & Solar Cells, 2002 ( 72 ) : 59 - 68.
  • 5B. Wu et al. , Bulk Multi-crystalline Silicon Growth for Photovohaic (PV) Application [ J ]. Journal of Crystal Growth,2008(310) :2 178-2 184.
  • 6M. Apel, D. Franke, and I. Steinbach, Simulation of the Crystallization of Silicon Ribbon on Substrate [ J ]. Solar Energy Materials & Solar Cells, 2002 ( 72 ) : 201 - 208.
  • 7唐亚楠,沈厚发.多晶硅铸造过程温度场模拟仿真[J].系统仿真学报,2010,22(7):1614-1617. 被引量:15
  • 8I. Steinbach. Numerical Simulations for Silicon Crystallization Process-examples from Ingot and Ribbon Casting[ J]. Solar Energy Materials &Solar Cells, 2002 (72) :59 - 68.

二级参考文献6

  • 1B Wu, N Stoddard, R H Ma, et al. Bulk Multicrystalline Silicon Growth for Photovoltaic (PV) Application [J]. Crystal Growth (S0022-0248), 2008, 310(7-9): 2178-2184.
  • 2C P Khattak, F Schmid. Directional Solidification of Crack-Free Silicon Ingots by Heat Exchanger Method [C]// Thirteenth IEEE PVSC, 1978. USA: IEEE, 1978: 137-141.
  • 3C P Khattak. Directional Solidification of 80kg Multicrystalline Silicon Ingots by HEM [C]// Twenty-Second 1EEE PVSC, 1981. USA: IEEE, 1981: 954-958.
  • 4俞昌铭.热传导及其数值分析[M].北京:清华大学出版社,1982.
  • 5刘秋娣,林安中.多晶硅锭凝固过程的影响因素分析及数值模拟[J].有色金属,2003,55(1):15-17. 被引量:11
  • 6张耀明.阳光经济和能源革命[J].江苏科技信息,2004(4):1-4. 被引量:4

共引文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部