摘要
借助工艺和器件仿真软件,对一种用于功率MOSFET和IGBT栅极驱动的半桥驱动芯片中的横向高压功率器件LDMOS进行了设计与仿真。该器件采用了双RESURF技术及双层浮空场板结构,通过对双层浮空场板层之间的距离以及双RESURF结构的ptop层的长度和浓度的优化设计,利用传统的Bi-CMOS工艺获得击穿电压689V和比导通电阻273×10–3.cm2的LDMOS。
With using two-dimension software of simulating devices and the processing steps,the LDMOS device,which was used in a half-bridge drive circuit chip suitable for power MOSFET and IGBT devices,was designed and simulated.The distance between two floating field plates and the concentration and the length of the ptop cayer of the double RESURF structure was optimized and signed.The results show that the LDMOS device has the breakdown voltage of 689 V and the on-resistance is of 273×10–3Ω？cm2 by using traditional Bi-CMOS process.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2013年第1期64-67,共4页
Electronic Components And Materials
