摘要
使用光刻的方法进行ITO电极的制作,可制得精细的电极结构,本文重点阐述了使用光刻制备ITO电极的方法,包括表面清洗、曝光参量、显影条件、腐蚀工艺等,其中较为理想的ITO光刻工艺为:50 s曝光时间、30 s显影时间、20 s化学腐蚀时间。并用对腐蚀工艺条件进行了理论分析,并使用光学相干断层扫描(OCT)技术对制备的电极进行了测量。
Using lithography method,an extremely fine ITO electrode could be obtained.A process of making ITO electrode by using lithography method is clarified by this paper,including superficial cleaning,exposure control,development control and etching process,a suitable lithography process were the 50 s exposure time,the development time were 50 s and a 20 s were used for chemical corrosion.Moreover,the etching process is studied in theoretical analysis,and the Optical Coherence Tomography（OCT） technology was used for the observation of the electrodes.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第6期1549-1553,1560,共6页
Journal of Synthetic Crystals
