摘要
A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 um CMOS process. Due to the smaller change of the op-amp＇s output voltage, this topology is very suitable for low power applications. In addition, errors caused by the finite op-amp gain, input offset voltage, and 1/f noise are eliminated with the correlated double sampling technique. Additionally, two-level process calibration techniques are designed to minimize the process spread. Finally, a method of getting a full period valid reference voltage output is discussed and experimental results are provided to verify the effectiveness of the proposed structure.
A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 um CMOS process. Due to the smaller change of the op-amp＇s output voltage, this topology is very suitable for low power applications. In addition, errors caused by the finite op-amp gain, input offset voltage, and 1/f noise are eliminated with the correlated double sampling technique. Additionally, two-level process calibration techniques are designed to minimize the process spread. Finally, a method of getting a full period valid reference voltage output is discussed and experimental results are provided to verify the effectiveness of the proposed structure.
基金
Project supported by the National Science and Technology Major Projects of China(No.2012ZX02503-005)
the Research Program of Science and Technology Commission of Shanghai(No.11511500903)
