摘要
讨论了金硅面垒型探测器及电荷灵敏放大器的工作原理,并针对金硅面垒型半导体探测器设计了专用电荷灵敏放大装置。采用晶体管2N3903为核心电荷灵敏放大器,设计由AD812三级放大电路及MAX913甄别电路组成的信号放大整形电路。设计双金硅面探测器结构及专门的电磁屏蔽措施提高装置的灵敏度及抗电磁干扰能力。该专用电荷灵敏放大装置工作稳定可靠,并具有宽响应带宽、高灵敏度及强抗干扰能力。
It discussed the gold silicon surface barrier semicontuctor detector and charge sensitive amplifier. To break the performance limitation of traditional charge amplifier, it designed a charge sensitive amplifier aimed at gold silicon surface barrier. It put forward a charge sensitive amplifier with transistor 2N3903 as its kernel, sig- nal amplification and shaping circuit was AD812 triple amplifier circuit and MAX913 threshold value compari- son circute. At the same time, gold silicon double - surface detector structure and special electromagnetic com- patible measures are adopted to improve sensitivity and anti - electromagnetic interference performance. Experi- ment shows that this charge sensitive amplifier works stable with wide response bandwidth, high sensitivity and good anti -interference performance.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2012年第12期1462-1466,共5页
Nuclear Electronics & Detection Technology
基金
中国人民公安大学大学生创新训练计划资助(201010041052)
关键词
金硅面垒型半导体探测器
电荷灵敏放大器
电磁屏蔽
双探测器结构
gold silicon surface barrier semiconducting detector
charge sensitive amplifier
electro magneticshielding （EMS）
double detector junction
