摘要
文章提出一种提取 Statz GaAs MESFET非线性电容模型参数的简单方法。它基于逐点拟合和综合拟合法，并以小信号模型数据分布在电容电压特性曲线的三个区为判据，判定提取的电容模型参数的正确性。计算表明，对偏置点少的电容 Cgs和 Cgd数据情况，提取 Statz非线性电容模型参数较适用。
An simple approach to extract the parameters of Statz GaAs MESFET nonlinear model is presented.The method is based on fitting measurement data with calculating data by point－ by－ point and then fitting all the points synthetically, and the parameters of capacitor models are determined correctly by using the data of small－ signal model distributed in the three areas of capacitance－ voltage characteristic curves as criterion. The calculating results show the method is still suitable for extracting parameters of Statz nonlinear capacitor model, under the condition that there are only a few data of capacitor Cgs and Cgd under different biases.
出处
《微电子学与计算机》
CSCD
北大核心
2000年第5期45-47,共3页
Microelectronics & Computer
