摘要
采用射频反应磁控溅射法在316L不锈钢基片上分别沉积了两种薄膜:一种是氟化类金刚石薄膜(F-DLC),另一种是先镀上一定厚度的SiC过渡层再沉积F-DLC.着重研究了薄膜的附着力随过渡层制备条件的变化规律.结果显示,增加SiC过渡层后薄膜的附着力明显增加,且附着力随SiC过渡层的制备条件有所变化,在射频输入功率为200W,沉积时间5min制备出的SiC过渡层上再沉积F-DLC时,附着力可达8.7N,远高于未加过渡层时F-DLC膜的附着力(4N).通过研究SiC的沉积速率曲线、表面形貌和红外光谱,探讨了SiC过渡层及其制备条件影响薄膜附着力的相关机制.
Two kinds of films are deposited on 316L stainless steel substrates by radio frequency reactive magnetron sputtering technique. One is fluorinated diamond-like carbon film （F-DLC） deposited on the 316L stainless steel substrate directly and the other is F-DLC with SiC intermediate layer. This paper focuses on the changing regulation of film adhesion with preparation condition. As the result, the adhesion of fluorinated diamond-like carbon film with SiC intermediate layer is obviously much better than that of F-DLC, and the adhesion is dependent on preparation condition of preparation SiC intermediate layer. The adhesion of F-DLC can reach 8.7 N with 200 W RF input power and 5 min deposition time, which is much bigger than the adhesion of F-DLC without intermediate layer （4 N）. The mechanism of the preparation condition of SiC influencing the adhesive force of F-DLC is studied by investigating the deposition rate curve, surface morphology and infrared spectrum.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第1期293-298,共6页
Acta Physica Sinica
