摘要
本文采用物理气相沉积 (PVD)法在不同预处理的Si(10 0 )衬底上沉积了C6 0 膜 ,并利用AFM和XRD研究了其生长特征和结构特性。结果表明 ,C6 0 膜的生长特性不仅与C6 0 分子的移动性和衬底的表面性质等多种因素有关 ,而且还受衬底表面先前淀积的C6 0 膜的有序性影响 ;H Si(10 0 )面上生长的C6 0 膜与普通抛光Si(10 0 )面上的相比更具有 111 取向。
In this paper,the C 60 films were fabricated on Si(100)substrate with various pretreatment by physical vapor deposition(PVD)method.The growth and the structure characteristics of C 60 film were also studied by AFM and XRD methods.It was indicated that the growth characteristic of C 60 film was related not only to the mobility of C 60 molecule and the surface characteristic of substrate,but also to the pre deposited C 60 film's order.The C 60 film on the H Si(100)substrate has a stronger(111)texture characteristic than that on the normal polish Si(100)substrate.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2000年第2期147-151,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金!资助项目 (5 96 82 0 0 5 )
