摘要
采用光电化学方法和交流阻抗方法将不同浓度的 BTA(苯并三氮唑 )和 4CBTA( 4 -羧基苯并三氮唑 )在硼砂缓冲溶液 ( p H9.2 )中对铜电极的缓蚀性能作了比较。发现在阳极向电位扫描中 ,一定浓度的 BTA作用下 ,铜电极光响应由 p型转化为 n型 ,并可依此判断缓蚀剂的缓蚀性能 ,n型光响应越大 ,缓蚀剂的缓蚀性能越好 ;而在 4CBTA作用下 ,铜电极光响应保持 p型 ,然其阴极向扫描中最大光电流变化明显 ,并可据此判断缓蚀剂的缓蚀性能 ,最大阴极光电流愈大 ,缓蚀效果越好。同时这两种缓蚀剂均可用 Φv 和某一较负电位下的阴极光电流 iph的大小来判断缓蚀剂的缓蚀性能 ,Φv 和 iph越负 ,缓蚀性能越好 ,交流阻抗方法的结果和光电化学的结果相一致。
The photoelectrochemistry behaviour of copper electrode in buffer borax solutions (pH9.2) containing BTA and 4CBTA was comparatively studied by using photoelectrochemistry technique. The photoresponse for copper electrode in solutions containing a certain amount of BTA exhibits n type during anodic polarization, and the bigger the n type photoresponse, the better the inhibition of the inhibitor. The photoresponse for copper electrode in solutions containing 4CBTA always exhibits p type during anodic polarization, but the photoresponse changes evidently during cathodic polarization, and the bigger the maximam cathodic photocurrent, the better the inhibition of the inhibitor. In the mean time, we can evaluate inhibitors by Φ v and i ph at a more negative potential, the more negative the Φ v and i ph the better the inhibition. The results from photoelectrochemical technique are in agreement with those from AC impedance technique.
出处
《华东理工大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2000年第2期172-176,共5页
Journal of East China University of Science and Technology
基金
厦门大学固体表面物理化学国家重点实验室资助项目!970 5
上海市高校青年科学基金!QF963 2
