摘要
利用电化学循环伏安法研究了Cu2+、In3+及S2O23-在不同pH条件下的伏安特性,发现以柠檬酸为络合剂,pH=6时几种离子在-0.8 V电位下的电化学还原行为相近,在此基础上采用恒电位法在ITO导电玻璃基底上制备CIS薄膜太阳能电池用的吸收层材料CuInS2半导体薄膜。为提高膜层的结晶度,选取空气、Ar、及Ar+S三种气氛对沉积的膜层进行热处理,SEM、XRD及Raman光谱结果表明,经Ar气氛中硫化热处理才可以得到结晶度好且形貌均匀致密的薄膜。Cu2+/In3+比影响薄膜的结晶生长,结果表明,随着Cu/In比的增大,薄膜以典型的黄铜矿结构为主,当沉积电位为-0.8V且Cu2+/In3+=1.8时基底上得到的高质量CuInS2半导体薄膜的光学带隙是1.55 eV。
Using electrochemical cyclic vohammetry, volt-ampere characteristic of Cu2＋ , In3＋ and S2O32- was studied at different pH value. Three kinds of ions appear similar behavior of electrochemical reduction with citric acid as complexing agent, pH of the solution equals 6 and deposition potential of - 0.8 V. On such a basis, CulnS2 semiconductor thin films onto indium tin oxide substrate were prepared by chronoamperometry, which used for absorption layer material of CIS thin film solar cells. In order to improve the crystallization of polycrystalline CuInS2, three different heat treatment atmospheres were selected for heat treatment, including bare burning in the air, burning in the argon, vulcanization in the argon. SEM, XRD and Raman spectrum results show that uniform and well-crystallized CuInS2 semiconductor films are synthesized through vulcanization heat treatment with the argon in the stove. In addition, the Cu/In ratio can also affect the crystallization of thin films, and mostly composed of chalcopyrite with the increasing Cu/In ratio. When Cu/In ratio equals 1.8 and the deposition potential of -0.8V, high quality CuInS2 semiconductor films are prepared, with the optical band gap of 1.55 eV.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第1期65-71,83,共8页
Journal of Synthetic Crystals
基金
国家自然科学基金(21276220)
河南基础与前沿科技项目(082300440150)
江苏省新型环保重点实验室开放课题(AE201124)
