摘要
利用 Ni金属诱导晶化 ( Metal Induced Crystallization,MIC)的方法制备 p- Si薄膜 .XRD,Raman光谱研究结果表明 ,a- Si/ Ni经 440℃ 2 h以上退火处理后 ,形成多晶相结构 .用 SEM,XPS等分析手段对薄膜的结构进行分析 ,并对金属
Amorphous Silicon (a Si) films were deposited by PECVD and then crystallized by metal induced crystallization (MIC) at 440 ℃. The Ni MIC p Si thin films were characterized by using XRD, Raman, SEM and XPS. The depth profiles of the structure and the chemical component of the films were analyzed, and the crystallization mechanism was discussed.
出处
《吉林大学自然科学学报》
CSCD
2000年第3期45-48,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
吉林省"九五"重大项目! (批准号 :K Y95 1-Al-5 0 2 )
中国科学院"九五"科技公关项目 !(批准号 :970 10 3 -0 1)
中国科学院院长
关键词
多晶硅薄膜
低温制备
退火
镍金属诱导晶化
metal induced crystallization
poly\|crystalline Si films
preparation at low temperatures
annealing treatment
