摘要
对制作工艺相同但发射区周长面积比不同的npn和pnp两种类型双极晶体管进行了辐照实验,研究了双极晶体管的电离总剂量辐射损伤机理和退火效应,分析了影响双极晶体管电离总剂量辐射特性的关键因素。实验结果表明,在相同累积电离辐射总剂量条件下,发射区周长面积比大的双极晶体管辐照敏感性更强,对于npn双极晶体管其电离总剂量辐照损伤的关键因素是辐照感生的氧化层正电荷,而影响横向pnp的关键因素为辐照感生的界面陷阱电荷的密度。提出了一种提高双极晶体管抗电离总剂量辐射性能的措施,为探索双极晶体管以及含有双极晶体管的电子线路的抗电离总剂量辐射加固技术提供了理论和实验依据。
The ionizing irradiation of total dose experiments was carried out on npn and pnp two types of bipolar transistors, which have the same fabrication process, but different ratio of perimeter and area in emitter region. Various damage mechanisms of ionizing radiation of total dose and annealing effects of the bipolar transistors were researched, and the key factors of ionizing irradiation of total dose in bipolar transistors were analyzed. Experimental results show that the bipolar transistors with larger ratio of perimeter and area in emitter region are more sensitive to ionizing irradiation than the smaller ones in the same condition. Positive oxide charge is the key factor of the radiation damage for npn, while the interface trap of the charge density is for lateral pnp. A measure of improving the ionizing irradiation hardness of bipolar transistors was proposed. An experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided, as well as the linear integrated circuits which containing bipolar transistors.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第3期222-226,共5页
Semiconductor Technology
关键词
双极晶体管
发射极
周长面积比
电离辐射
总剂量
退火
bipolar transistor
emitter
perimeter area ratio （P/A）
ionizing irradiation
totaldose
annealing
