摘要
An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage（BV）.Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction（SJ） vertical double-diffused metal-oxide semiconductor（VDMOS）,the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS（TG VDMOS） and conventional superjunction trench gate VDMOS（SJ TG CDMOS）.
An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage（BV）.Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction（SJ） vertical double-diffused metal-oxide semiconductor（VDMOS）,the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS（TG VDMOS） and conventional superjunction trench gate VDMOS（SJ TG CDMOS）.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 61176069 )
the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062)
