期刊文献+

基于稳态扫频的MEMS谐振压力传感器芯片测试 被引量:1

MEMS Resonant Pressure Sensor Chip Testing Based on the Steady-State Sweep
原文传递
导出
摘要 针对硅微谐振式压力传感器开环测试的需求,提出了一种基于稳态扫频的硅微谐振式压力传感器芯片测试方法,实现了高精度扫频激励信号电路与高分辨率检测电路的设计。此设计将单片机技术与直接数字频率合成技术的优点相结合,实现了范围为1 kHz~1 MHz精确扫频,其最小扫频步距为1 Hz。通过算法补偿有效减小了扫频激励信号的频率误差,使其平均绝对误差低于0.08 Hz。在幅值检测电路设计中,采用峰值检测电路与差分PulSAR ADC电路相结合,实现了传感器输出信号电压幅值的高分辨率检测,实测得到传感器幅频曲线,并对谐振器的谐振频率稳定性进行了测试,计算出了谐振器的机械品质因数和谐振频率等参数,为谐振器结构优化设计提供了依据。 According to the requirements of the open-loop testing for the MEMS resonant pres sure sensor, the chip testing method of the MEMS resonant pressure sensor based on the steady state frequency sweep was presented, the designs of the high precision sweep excitation signal cir- cuit and high resolution detection circuit were achieved. Through combining the advantages of the single chip microcomputer and direct digital frequency synthesis technology, the precise sweep with the range from 1 kHz to 1 MHz and the minimum sweep step of 1 Hz was realized. The fre- quency error of the sweep excitation signal was reduced through the corresponding compensation, and its mean absolute error was less than 0.08 Hz. In the design of amplitude detection circuits, through combining the peak detection circuit and differential PulSAR ADC circuit, the high reso- lution detection for the output signal voltage amplitude of the sensor was realized. The amplitude- frequency curve was obtained with the actual measurement, and the resonance frequency stabilityof the resonator was tested. The relevant parameters the mechanical quality factor and resonance frequency, structure optimization design. of the resonator were calculated, such as providing the references for the resonator
出处 《微纳电子技术》 CAS 北大核心 2013年第4期224-228,254,共6页 Micronanoelectronic Technology
关键词 微机电系统(MEMS) 谐振式压力传感器 芯片测试 直接数字合成 扫频 micro-electromechanical systems (MEMS) resonant pressure sensor chip testing direct digital synthesis sweep
  • 相关文献

参考文献14

  • 1TILMANS H A C, LEGTENBERG tL Electrostatic,ally driven va- cuum-encapsulated polysilicon resonators [ J ]. Sensors and Aetuators: A, 1994, 45 (1): 67-84.
  • 2GREENWOOD J C, SATCHELL D W. A miniature silicon resonant pressure sensor [J]. IEE Proceedings of Control Theory and Applications, 1988, 135 (5) :369 - 372.
  • 3GREENWOOD J, WRAY T . High accuracy pressure mea- surement with a silicon resonant sensor [J]. Sensors and Ac- tuators: A, 1993, 37/38: 82-85.
  • 4王玉朝.硅微谐振式压力传感器接口电路设计研究[D].西安:西北工业大学,2011:20-23.x.
  • 5杜伟华,杨红伟,陈国鹰,陈宏泰,李雅静,彭海涛.808nm半导体激光器的腔面反射率设计[J].光电工程,2008,35(9):41-44. 被引量:6
  • 6樊尚春.热激励谐振式硅微结构压力传感器[J].科学技术与工程,2004,4(5):426-429. 被引量:8
  • 7TANG W C K. Electrostatic comb drive resonant sensor and actuator applications [D]. Berkeley: University of California, 1990 : 34 - 36.
  • 8WELHAM C J, GARDNER J W, GREENWOOD J. A laterally driven micro-machined resonant pressure sensor[J]. Sensors and Actuators; A, 1996, 52 (1/2/3): 86-91.
  • 9STEMME G. Resonant silicon sensors [J]. J Micromech Mi- zroeng, 1991, 1 (2): 113-125.
  • 10TILMANS H A C, ELWENSPOEK M, FLUITMAN J H J. Micro resonant force gauges [J]. Sensors and Actuators: A, 1992, 30 (1/2): 35-53.

二级参考文献13

  • 1辛国锋,陈国鹰,陈高庭,瞿荣辉,方祖捷,花吉珍,赵润.大功率半导体激光器腔面镀膜的理论研究[J].中国材料科技与设备,2006,3(6):57-60. 被引量:2
  • 2[1]Fan Shangchun, Jia Zhenhong. On the temperature profile of the thermally excited reaonant silicon micro structural pressure sensor. Chinese Journal of Aeronautics, 2002 ; 15(3) : 156-160
  • 3[2]Luo R C. Sensor technologies and microsensor issues for mechatronics systems (invited paper). IEEE/ASME Transactions on Mechatronics.1996,1(1):39-49
  • 4[3]Heikki S, et al. Microelectromechanical system in electrical metrology.IEEE Transactions on Instrumentation and Measurement. 2001, 50(2) :440-444
  • 5[4]Melin T, et al. A low-pressure encapsulated deep reactive ion etched resonator pressure sensor electrically excited and detected using burst technology. J Micromech, 2000;10:209- 217
  • 6[5]Devoe D L. Piezoelectric thin film micromechanical beam resonator.Sensors & Actuators, 2001; A88:263-272
  • 7江剑平.半导体激光器[M].北京:电子工业出版社,2001.
  • 8刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:电子工业出版社,2004.
  • 9Crump P, Dong W M, Grimshaw M, et al. 100-W+ diode laser bars show >71% power conversion from 790-rim to 1000-rim and have clear route to > 85% [J]. SHE, 2007, 6456: 64560M
  • 10Peters M, Rossin V, Everett M, et al. High-power, high-efficiency laser diodes at JDSU [J]. SPIE, 2007, 6456: 64560G

共引文献14

同被引文献10

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部