摘要
文章使用PPH25X工艺3.2mm栅宽的PHEMT功率管芯设计了一款单级功率放大器。经过ADS软件仿真得出较理想的仿真结果。流片后比较了仿真结果与测试结果,在8.5GHz^10.5GHz的频率范围内的实际测试小信号增益在7dB左右,在输入功率为24.8dBm的情况下,输出可以达到33dBm,输入驻波基本小于2。最后利用寿命加速实验对所设计的芯片进行了可靠性评价。经验证,沟道温度选取240℃、260℃和280℃的失效机理一致,在寿命加速分布图上外推出了该器件正常工作条件下的平均失效前寿命。
The author designs a single-stage power amplifier using the 3.2mm gate-wide PHEMT cell. Ideal simulation results obtained through the ADS software simulation. Then compares the simulation results and test results after tapeout, the actual test result in the 8.5GHz-10.5GHz frequency range is that the small signal gain is about 7dB, the output power can reach 33dBm when the input power is 24.8dBm and the input VSWR is less than 2.0 on the whole. It evaluates the reliability of the designed chip by high-temperature accelerated lifetest at last. The temperature of channel in this test is choosed by 240℃, 260℃, 280℃. It proves consistent with the failure mechanism under the three temperatures points. The MTTF in normal condition of this device can be predicted on the life-accelerated distribution paper.
出处
《电子与封装》
2012年第11期40-44,共5页
Electronics & Packaging
