摘要
对比分析了经金刚石磨盘研磨、脱钴/未脱钴YG8硬质合金上蒸镀非晶碳膜预处理对金刚石形核密度的影响.结果表明,未脱钴者,金刚石的形核密度低,金刚石结晶质量差,颗粒稀少,未成膜.原因是金刚石沉积过程中,基体内部的钴会扩散或蒸发到表面,产生明显聚集和长大.而经脱钴处理者,成核密度可达10~8cm^(-2)颗粒尺寸1～2μm,金刚石结晶质量好.刻面轮廓分明,表面基本成膜.
The effect of cobalt etching on diamond nucleation density onto cobalt-cemented tungsten carbide substract after grinding with diamond disk- cobalt etching and pre-coating with an amorphous carbon film was studied in this paper. The results showed that, without cobalt removal, diamond deposition had a very low nucle-ation density on cemented carbide substrate even if an amorphous carbon film was pre-coated. In this case, only a few flower-like micro-crystalline diamond grains were formed. During long term diamond deposition process, cobalt atom diffused from inside to the surface of cemented carbide and formed cobalt particles, and this had a detrimental effect on diamond nucleation and growth. On the other hand, a diamond nucleation density of up to 108cm^(-2) was reached on cemented carbide substrate after cobalt etching and pre-coating with amorphous carbon film. High quality diamond film with grain size of 1?/祄 and well-defined facets was obtained.
出处
《理化检验（物理分册）》
CAS
1999年第12期534-536,553,共4页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
关键词
硬质合金
金刚石膜
预处理
形核密度
Cemented carbide Diamond film Pre-treatment Nucleation density
