摘要
N+缓冲层设计对PT-IGBT器件特性的影响至关重要。文中利用Silvaco软件对PT-IGBT的I-V特性进行仿真。提取相同电流密度下,不同N+缓冲层掺杂浓度PT-IGBT的通态压降,得到了通态压降随N+缓冲层掺杂浓度变化的曲线,该仿真结果与理论分析一致。对于PT-IGBT结构,N+缓冲层浓度及厚度存在最优值,只要合理的选取可以有效地降低通态压降。
The design of N＋ buffer plays an important role in characteristics of PT-IGBT devices. The I-V characteristics of PT-IGBT were simulated Using ＂Silvaco＂ in the paper. Comparing with the different values of on-state voltage drop under different doping concentration of the N＋ buffer at the same current density, the curves of on-state voltage drop with different doping concentration of the N＋ buffer was gained. The simulation results coincided with theoretical analysis. For PT-IGBT structure, there was an optimal value of the doping concentration of the N＋ buffer, and the on-state voltage drop would reduce through reasonable design.
出处
《电子设计工程》
2013年第7期191-193,共3页
Electronic Design Engineering
