摘要
采用射频等离子体辅助分子束外延技术生长得到了In组分精确可控且高质量的InxGa1xN(x0.2)外延薄膜.生长温度为580℃的In0.19Ga0.81N薄膜(10.2)面非对称衍射峰的半高宽只有587弧秒,背景电子浓度为3.96×1018/cm3.在富金属生长区域,Ga束流超过N的等效束流时,In组分不为零,即Ga并没有全部并入外延层;另外,稍微增加In束流会降低InGaN的晶体质量.
Growth behaviors of InxGa1-xN （x≤0.2） materials by plasma-assisted molecular beam epitaxy （PA-MBE） are investigated in detail. A precise control of the incorporation of indium into InxGa1-xN at a growth temperature of 580℃ is realized. The In0.19Ga0.81N shows a very narrow width of 587 arcsec for the （10.2） asymmetrical reflection from high-resolution X-ray diffraction and the back- ground electronic concentration is 3.96 × 1018 cm3 . In the region of metal-rich growth, no negligible indium incorporation is observed even if the Ga beam flux is much larger than the equivalent N flux. This growth behavior might be ascribed to an incomplete Ga incorporation during InGaN growth. In addition, a slight increase of In flux results in crystalline quality degradation of InGaN epilayers.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第8期380-385,共6页
Acta Physica Sinica
