摘要
La2/3Sr1/3MnO3 films with （110） preferred orientation were deposited on Si （100） substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented （110） preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The （110） oriented film presented higher metal-insulator transition temperature, and the lower resis- tivity than that of the samples without preferred orientation.
La2/3Sr1/3MnO3 films with （110） preferred orientation were deposited on Si （100） substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented （110） preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The （110） oriented film presented higher metal-insulator transition temperature, and the lower resis- tivity than that of the samples without preferred orientation.
基金
supported by National Natural Science Foundation of China (51002013,11174201)
Natural Science Foundation of Beijing Municipal (2122007)
Science and Technology Research Projects of Education Department of Henan province (13B430895)
