摘要
用质量比为1%∶0.2%(质量分数)的Sn、S混合粉末在玻璃衬底上热蒸发沉积SnS薄膜,氮气保护下对薄膜进行350℃、40min热处理后,得到简单正交晶系SnS多晶薄膜,薄膜的电阻率为103Ω.cm,选择2%和4%(质量分数)的Zn掺杂来改善SnS薄膜的导电性。研究表明,SnS∶Zn薄膜最有效的热处理条件为300℃、40min,掺Zn后薄膜的物相结构转为简单正交和面心正交晶系混合相,SnS∶Zn薄膜(2%和4%(质量分数))的电阻率在1.8528×10-3～4.944×10-4Ω.cm之间,导电类型为N型。薄膜中Sn和S分别呈+2和-2价,Zn显示+2价,以间隙和替位两种状态存在于SnS中,对薄膜导电性起改善作用的是间隙态的Zn离子。
The SnS thin films were thermal evaporated on glass substrate,of which the mixed ratio for Sn∶S is 1wt%∶0.2wt%.After heat-treatment at 350℃ for 40 min in nitrogen atmosphere,simple orthorhombic SnS polycrystalline films were obtained,with resistivity of 103 Ω·cm.Zn（2wt% and 4wt%,respectively） doping was applied to improve the conductivity of SnS thin films.The experimental results showed that the structure of Zn doped SnS thin films was turned to a mixed phase with simple orthorhombic and face-center orthorhombic,and the most effective heat-treatment condition was 300℃ for 40min.The resistivity of the Zn（2wt% and 4wt%） doped SnS thin films,with n-type behavior,ranged from 1.8528×10-3 to 4.944×10-4 Ω·cm.Chemical states of Sn,S and Zn were ＋2,-2 and ＋2.Interstitials doping and substitutions doping both existed for Zn atoms in SnS thin films.Due to the crystal structure,the major contribution for the improvement of conductivity was the interstitials state.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2013年第8期1081-1085,共5页
Journal of Functional Materials
基金
内蒙古自治区自然科学基金资助项目(2009MS0109)
内蒙古自治区高等学校科技资助项目(NJ10017)
关键词
热蒸发
热处理
SnS薄膜
Zn掺杂
电学特性
thermal evaporation
heat treatment
SnS thin films
Zn-doping
electrical characterization
