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Thermal plasma synthesis of SiC

Thermal plasma synthesis of SiC
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摘要 Synthesis of silicon carbide has been carried out using thermal plasma processing technique using SiO2 as the solid feed and CH4 as the gaseous reducing agent. Thermochemical calculations have been performed varying the molar ratio of silicon dioxide and methane to determine the feasibility of the reaction. Experiments using a molar ratio of SiO2:CH4 equal to 1:2 produced maximum yield of SiC of about 65 mol % at a solid feed rate of 5 g/min. Mostly spherical morphology with some nanorods has been observed. The presence of Si had been observed and was quantified using XRD, HRTEM, Raman spectroscopy and X-ray photoelectron microscopy (XPS). Si acts as a nucleating agent for SiC nanorods to grow. Synthesis of silicon carbide has been carried out using thermal plasma processing technique using SiO2 as the solid feed and CH4 as the gaseous reducing agent. Thermochemical calculations have been performed varying the molar ratio of silicon dioxide and methane to determine the feasibility of the reaction. Experiments using a molar ratio of SiO2:CH4 equal to 1:2 produced maximum yield of SiC of about 65 mol % at a solid feed rate of 5 g/min. Mostly spherical morphology with some nanorods has been observed. The presence of Si had been observed and was quantified using XRD, HRTEM, Raman spectroscopy and X-ray photoelectron microscopy (XPS). Si acts as a nucleating agent for SiC nanorods to grow.
出处 《Advances in Manufacturing》 SCIE CAS 2013年第1期50-61,共12页 先进制造进展(英文版)
基金 the financial support provided by ACIPCO
关键词 Silicon carbide Thermal plasma - Highresolution transmission electron microscopy (HRTEM)Raman spectroscopy ~ X-ray photoelectron microscopy(XPS) Silicon carbide Thermal plasma - Highresolution transmission electron microscopy (HRTEM)Raman spectroscopy ~ X-ray photoelectron microscopy(XPS)
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参考文献10

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