摘要
重点介绍了目前去除SiHCl3中硼杂质的先进方法,主要有萃取法、络合物法、吸附法、部分水解法和精馏法,并展望了后续SiHCl3的除硼工艺,指出应将不同的提纯工艺优化结合,建立严格科学的痕量杂质全过程技术管理控制体系,进一步优化杂质监测分析技术,才能高效、经济地去除SiHCl3中的杂质。
The advanced purification method of removing boron impurity from trichlorosilane includes extrac- tion method,complex method,adsorption method,partial hydrolysis method and rectification method, etc. It is put for- ward an outlook on the subsequent process of boron removal from trichlorosilane. Simultaneously, it is point out that combinate and optimize different purification processes, establish a scientific and strict management control system of the trace impurity, optimize the impurity monitoring analysis technology, which could achieve the high efficient and economical method of removing the impurities from the trichlorosilane.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2013年第9期29-32,共4页
Materials Reports
基金
昆明理工大学分析测试基金(20130094)
关键词
高纯SiHCl3
硼杂质
提纯
氯硅烷
high-pure trichlorosilane, boron impurity, purification, chlorosilane
