摘要
采用脉冲激光淀积 (PL D)技术 ,利用 Zn O作为缓冲层 ,在 Si(10 0 )衬底上生长出 Al N薄膜。X-射线衍射图谱表明 ,该 Al N薄膜具有 c轴取向特性。X-光电子能谱测试表明 ,要获得接近理想化学配比的 Al N薄膜 ,需要高真空淀积气氛或合适的 N2 气氛 ;同时还表明 ,Al N薄膜表面容易形成保护性氧化层。剖面透射电子显微镜显微照相显示该 Al N/ Zn O/ Si(10 0 )多层结构清晰可辨 ,层与层之间的界面非常平整。原子力显微镜分析表明 ,采用 Zn O缓冲层可改善 Al N薄膜的表面粗糙度 (RMS=1nm)
AlN film was gr own by pulsed laser deposition on Si(100 )substrate with ZnO buffer layer.XRD pat tern shows that as-deposited AlN film is c -axis oriented.XPS results suggest t hat high vacuum ambient or appropriate N 2 ambient is needed for growth of stoic hiometric AlN films.XPS results also sho w a protective oxide layer exists on the surface of the AlN film.Cross-sectional TEM micrograph of as-deposited film sho ws a clear multiple-layers structure wit h smooth interface.The surface of the Al N film is found to be very smooth with RMS of 1 nm by AFM,which shows that the use of ZnO buffer layer can improve the surface character of the AlN film.
出处
《压电与声光》
CSCD
北大核心
2000年第5期322-325,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目 !(5 9982 0 0 8)
