摘要
文章介绍了一种利用正统理论与 Ｍｏｎｔｅ Ｃａｒｌｏ方法模拟单电子隧穿器件的程序。该程序可模拟电子通过包含小隧道结、电容和理想电压源的电路的输运过程。利用该程序，对单库仑岛和多库仑岛的单电子晶体管（ＳＥＴ）系统进行了模拟。
In the paper, a simulator which is suitable for single electron tunneling device, based on Orthodox theory and Monte Carlo method, is introduced. It simulates the propagation of electrons through a network consisting of small tunnel junctions, capacitors and ideal voltage sources. The simulation of the SET(single electron transistor) which is comprised of single Columb island and multi-islands are done using the simulator.
出处
《微电子学与计算机》
CSCD
北大核心
2000年第4期47-50,共4页
Microelectronics & Computer
基金
国家自然科学基金
霍英东基金!(69771011
69890227)
