摘要
采用介质键合技术制备的Si基GaAs材料衬底,缺陷密度小。对待键合的器件结构电学性能影响小。对采用目前常见的介质材料制备的Si基GaAs材料的力学性能进行了仿真分析,得到用于制备MEMS衬底的最佳介质键合层是SiO2,其衬底材料应力转换率高、量程大、位移小、制备工艺简单且为亲水性,制备的Si基GaAs衬底键合强度大,机械特性好。同时,对不同厚度的介质层材料对Si基GaAs材料的力学性能影响进行了研究分析,得到介质厚度越厚,其应力转换率越高,衬底材料的力敏效应就会越好。
Si-based GaAs material substrate fabricated by medium bonding technology has low defect density,small effect on electrical property of the bonding device structure.Simulation analysis on mechanical characteristics of material is carried out.SiO2 is the best medium bonding layer for fabrication of MEMS substrate.The substrate material has high stress conversion rate,wide range,small displacement and simple fabrication process and is hydrophilic.The bond strength is strong and mechanical characteristics are good.Meanwhile,effect of different thickness of medium layer material on mechanical properties of Si-based GaAs material is researched.The more thicker the thickness of medium is,the higher stress conversion rate is,the better pressure sensitive effect is.
出处
《传感器与微系统》
CSCD
北大核心
2013年第6期53-55,59,共4页
Transducer and Microsystem Technologies
基金
国家自然科学基金资助项目(61171056)
关键词
Si基异质外延GaAs材料
键合
应力转换率
力电耦合效应
Si-based heterogeneous epitaxial GaAs material
bonding
stress conversion rate
force electric coupling effect
