摘要
Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N,a material that decomposes below 300℃,and thus promises many interesting applications in directwriting.The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure,surface morphology,and temperature dependence of electrical resistivity.More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice.A small amount of In or Ti can improve the crystallinity,and consequently the surface morphology.While the decomposition temperature is rarely influenced by In,the Ti-doped sample,Cu59.31Ti2.64N38.05,shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks,even after annealing at 500℃.Both In and Ti reduce the bandgap of the original Cu3N phase,resulting in a smaller electrical resistivity at room temperature.The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K.These results can be useful in improving the applicability of copper-nitride-based thin films.
Thin films of ternary compounds CuxlnyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N, a material that decomposes below 300 ℃, and thus promises many interesting applications in directwriting. The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure, surface morphology, and temperature dependence of electrical resistivity. More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice. A small amount of In or Ti can improve the crystallinity, and consequently the surface morphology. While the decomposition temperature is rarely influenced by In, the Ti-doped sample, Cu59.31Ti2.64N38.05, shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks, even after annealing at 500 ℃. Both In and Ti reduce the bandgap of the original Cu3N phase, resulting in a smaller electrical resistivity at room temperature. The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K. These results can be useful in improving the applicability of copper-nitride-based thin films.
基金
supported by the National Natural Science Foundation of China (Grant Nos. 51172272,10904165,and 11290161)
the National Basic Research Program of China (Grant No. 2012CB933002)
