期刊文献+

工业硅酸浸去除金属杂质钙 被引量:2

Removal of calcium contained in industrial silicon with acid leaching method
下载PDF
导出
摘要 研究了HF-HCl浸出剂体系中,HF含量、HCl含量、浸出时间和硅粉粒度等因素对除钙的影响。结果表明,HF含量是最主要的影响因素;在2%HF-3%HCl、室温20℃、5 h的最佳条件下,钙的去除率达到84.5%;在HF-HCl浸出剂体系中,CaF_2的形成降低了钙的去除率。电子显微镜和能谱分析发现,工业硅中存在含钙四元系金属间化合物Si_8Al_6Fe_4Ca,该化合物易被低浓度氢氟酸去除。 The influence of factors such as HF contents, HC1 contents, leaching time, silicon powder particle size on the calcium removal in the HF-HC1 leaching agent system was researched. And the research results showed that the HF contents was the main influential factors, the calcium removal rate could reach 84.5% under the optimal conditions of 2%HF-3%HCI, 20℃ and 5 hours, and the CaF2 could decrease the calcium removal rates in the HF-HC1 leaching agent system. Based on the electron microscopy and energy spectrum analysis, it is discovered that the SisA16Fe4Ca of calcium-containing quatermary intermetallics existed in the industrial silicon could be easily removed by low-concentration hydrofluoric acid.
出处 《中国有色冶金》 CAS 2013年第3期64-67,共4页 China Nonferrous Metallurgy
基金 NSFC-云南省联合基金项目(U1137601)资助 云南省自然科学基金项目(2010CD025)资助
关键词 工业硅 酸浸 除钙 industrial silicon acid leaching calcium removal
  • 相关文献

参考文献4

二级参考文献62

  • 1王宇,尹盛,肖成章,何笑明,王敬义.硅材料湿法提纯理论分析及工艺优化[J].太阳能学报,1995,16(2):174-180. 被引量:20
  • 2于站良,马文会,戴永年,杨斌,魏奎先.太阳能级硅制备新工艺研究进展[J].轻金属,2006(3):43-47. 被引量:29
  • 3高技术新材料要览编辑委员会.高技术新材料要览[M].北京:中国科学技术出版社,1993..
  • 4傅恒志,张军.电磁流体力学与材料工程[M].北京:高等教育出版社,1998.1872224
  • 5Y Ohshita, Y Nishikawa, M Tachibana, et al. Effects of defects and impurities on minority carrier lifetime in castgrown polycrystalline silicon [J]. Journal of Crystal Growth, 2005,275(1-2) :491-494.
  • 6S Pizzini. Solar grade silicon as a potential candidate material for low-coat terrestrial solar cells [J ]. Sol. Energy Mater, 1982,6 (3) : 253-297.
  • 7T LChu, SS Chu, R W Kelm Jr, et al. Solar cells from Zone-Refined metallurgical silicon[J]. Journal of the Electrochemical Society, 1978,125 (4): 595-597.
  • 8A Schonecker, L Geerlings, A Muller. Casting Technologies for Solar Silicon Wafers: Block Casting and RibbonGrowth-on Substrate[J]. Diffusion and Defect Data Pt. B: Solid State Phenomena, 2004,95-96 : 149-158.
  • 9H J Moller, C Funke, M Rinio,et al. multicrystalline silicon for solar cells[J]. Thin Solid Films,2005,487(1-2) : 179- 187.
  • 10I Yonenaga, T Ayuzawa. Segregation coefficients of various dopants in SixGe1-x(0.93<x<0.96) single crystals[J]. Journal of Crystal Growth, 2006,297(1) : 14-19.

共引文献41

同被引文献211

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部