摘要
在直拉法硅单晶生长过程中,由于位错的产生经常会导致硅棒发生断棱与掉苞现象,严重影响了晶体硅和器件的性能,降低了硅太阳能电池的光电转换效率。为了分析该现象,借助于位错形成的理论,探讨了Φ203mm(100)硅棒发生断棱与掉苞的具体原因及应对措施。影响直拉法单晶硅棒发生断棱与掉苞的因素包括:熔体中过多的杂质,热场、机械传动装置及炉体的不稳定等。
The growth problems in CZ-Si crystal occurs frequently in silicon single crystal growth due to dislo- cations, has seriously affected the quality of crystal silicon and the performance of the device, reducing the photoelec- tric conversion efficiency of solar cells. In order to analyze the growth problems in CZ-Si crystal, with the help of the formation of dislocation theory, the specific causes of growth problems in （100） silicon crystal of Ф2O3 mm and counter measures are discussed. The main factors are the too many impurities in melt, the instability of thermal field, mechani- cal transmission devices and furnace.
关键词
直拉法
位错
单晶生长
杂质
热场
Czochralski method （CZ）, dislocation, crystal growth, impurity, thermal field
