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高灵敏度SCR梁式G开关的设计与应用

Design and Application of a SCR Microcantilever G Switch
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摘要 微悬臂梁是多种MEMS传感器件的基本结构之一,改善微悬臂梁的测量性能一直受到人们广泛关注;为提高传统微悬臂梁的灵敏度,引入了应力集中区域,仿真分析了不同特征应力集中区域对灵敏度和测量范围的影响规律,设计制备了一种SCR梁式G开关,可根据系统需要改变SCR特征从而调整开关性能指标;该开关作为处理器状态控制电路的重要器件应用于导弹包装箱状态监测微系统中,具有良好的适用性。 Microcantilever is one of the basic structure of a variety of MEMS sensors. Improving the measurement performance of micro cantilever has been subject to a widespread concern. The introduction of stress concentration region (SCR) is a good way to improve the sen sitivity of the traditional microcantilever. We analyzed the regularity of sensitivity and measurement range under different characteristics of SCR by simulation, a SCR microcantilever G switch was designed. According to the system need to change the SCR feature to adjust the switching performance indicators. The switch has good applicability in the processor state control circuit used in missile condition monitoring
出处 《计算机测量与控制》 北大核心 2013年第6期1587-1589,共3页 Computer Measurement &Control
关键词 MEMS G开关 SCR 微悬臂梁 MEMS G switch stress concentration region(SCR) microcantilever
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  • 1冯敏华,陈文元,张卫平,谈顺毅,李胜勇.电磁驱动型MEMS安全保险装置关键技术研究[J].新技术新工艺,2007(1):11-13. 被引量:1
  • 2赵剑,贾建援,王洪喜,陈光炎.屈曲式微加速度开关设计与分析[J].西安交通大学学报,2007,41(3):358-362. 被引量:3
  • 3李德葆.振动模态分析及其应用[M].北京:宇航出版社,1993..
  • 4[1]Smith C S.Piezoresistance effect in germanium and silicon[J].Physics Review,1954,94:42-49.
  • 5[2]Toriyama T,Sugyama S.Analysis of piezoresistance in p-type silicon for mechanical sensors[J].Journal of Microdectromechanical Systems,2002,11(5):598-604.
  • 6[3]Bashtr R,Gupta A,Neudeck G W,et al.On the design of piezoresistive silicon cantilevers with stre88 concentration regions for scanning probe microscopy applicaaons[J].J,Micromech Microeng,2000,10:483-491.
  • 7[4]Bao M H,Analysis and Design Principles of MEMS Devices[M].New York:Elsevier.2005.
  • 8[5]Chivukula V,Wang M,Ji H F,et al.Simulation of SiO2-based piezoresistive microcantilevers[J].Sensors and Actuators A,2006.125:526-533.
  • 9[6]Duc T C,Creemer J F,Sarre P M.Piezoresistive cantilever beam for force sensing in two dimensions[J].IEEE Sensors Journal,2007,7(1):96-104.
  • 10[7]Seel S C,Thompson C V.Piezoresistive microcantilevers for in situ stress measurements during thin film deposition[J].Review of Scientific Instnansnts,2005,76:075103-075110.

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