摘要
采用氧化钒(VOX)薄膜作为热敏层的非制冷红外微测辐射热计在红外探测方面已取得很大成功,而当将其用于波长更长的远红外太赫兹(THz)波探测时其中存在的不足就会体现出来。介绍了基于微测辐射热计设计的THz探测器所需的THz波吸收材料、VOX热敏材料及信号读出电路应满足的基本要求,为研制THz波探测器提供了必要参考,并给出已研制成功的VOX热敏薄膜材料的部分性能实验结果。
Although uncooled infrared microbolometers utilizing vanadium oxide（VOx） thin films as the thermal sensing layers have achieved great success in infrared detection applications, there are many shortcomings when they are directly employed to detect the Terahertz（THz） wave whose wavelength locates in the far infrared region. In this paper, the basic technical requirements of the THz absorber, VOx thin film, and signal read-out circuit for the design of THz detector based on microbolometer are discussed. Some experimental results of VOx thin films with good thermal sensing performance are given.
出处
《太赫兹科学与电子信息学报》
2013年第3期328-331,共4页
Journal of Terahertz Science and Electronic Information Technology
