摘要
对Si基槽型(slot)光波导的传输特性进行了研究。采用三维时域有限差分(3D-FDTD)法研究了芯层中的光功率与波导槽型宽度及Si条带宽度之间的关系,结果显示,槽型光波导具有很好的光功率约束效率,可以达到30%以上;分析了光功率的变化规律及其优化,综合考虑光功率和光功率密度确定波导结构参数,实现最佳光功率分布,横向光功率分布沿x轴方向具有很好的约束效果,沿y轴方向呈现高斯分布;分析了底部Si薄层对光功率的影响,100nm的底部Si薄层使得芯层的光功率下降50%,减小底部Si薄层厚度有利于光功率约束效率的提高;采用电子束刻写(EBL)技术和等离子刻蚀(ICP)技术制备了Si基槽型光波导,实验研究了其传输损耗,结果显示,槽型光波导具有较低的传输损耗,达到13.5 dB/cm。
The transmission properties of the silicon slot optical waveguides are researched. The relation- ships between the slot optical power and the widths of the slot and silicon strip are studied by using FDTD method. Results show that silicon slot optical waveguides can offer good po^er confinement effi- ciency which can be as high as 30 %. The optical power confinement and its optimization are analyzed. The waveguide parameters of the slots can be optimized by taking the optical power and power density into account,by which a best field distribution can be obtained. The field distribution at the cross section shows an excellent confinement along x direction and a Gaussian distribution along y direction. The effects of the thin silicon bottom slab on the power confinement are studied. A 100 nm thick silicon bot- tom slab will decrease the power in the slot by 50 %. A slot waveguide is fabricated on SOI wafer by u- sing electron beam lithography and plasma etching technologies. The transmission loss is studied experi- mentally. Results show that it has a good transmission loss as low as 13.5 dB/cm.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2013年第7期1286-1290,共5页
Journal of Optoelectronics·Laser
基金
中国科学院半导体研究所集成光电子国家重点联合实验室开放基金(2011KFB003)资助项目
关键词
Si基光波导
槽型光波导
传输特性
功率约束
损耗
Si optical Waveguide
slot optical waveguide
transmission property
power confinement
loss
