摘要
报道了利用聚(3-己基噻吩)(P3HT)作为前置缓冲层来弥补(4,8-双-(2-乙基己氧基)-苯并[1,2-b:4,5-b]二噻吩)-(4-氟代噻并[3,4-b]噻吩(PBDT-TT-F):[6,6]-苯基-C61-丁酸甲酯(PC61BM)共混体相异质结(BHJ)电池对450-600nm处光谱响应不足的新的器件结构设计思路.光谱带隙为1.8eV的PBDT-TT-F在550-700nm处有很强的光谱吸收,在有机太阳电池器件上有很好的应用潜能.但其在350-550nm处的吸收不强,影响了器件对太阳光谱的利用效率.与此相比,P3HT薄膜的光谱吸收主要在450-600nm范围内,同PBDT-TT-F形成良好的互补关系.新设计的器件外量子效率(EQE)研究结果表明,利用P3HT作为前置缓冲层可以与PBDT-TT-F:PC61BM薄膜中的PC61BM形成平面异质结,从而拓展了器件在450-600nm处的光谱响应范围,实现光谱增感作用.优化P3HT的厚度为20nm左右,器件对外输出的短路光电流密度从11.42mA·cm-2提高到12.15mA·cm-2,达到了6.3%的提升.
We report here the photovoltaic performance of a solar cell using poly-{[4,8-bis[（2-ethylhexyl） oxy]-benzo[1 ,2-b： 4-5-b＇]dithiophene-2,6-diyl]-alt-[3-fluore-2-（octyloxy）carbonyl-thieno[3-4-b]thiophene-4 ,6- diyl]} （PBDT-TT-F）：[6,6]-phenyI-C61-butyric acid methyl ester （PC61BM） as the photoactive layer in combination with a thin poly（3-hexylthiophene） （P3HT） film as a photosensitizing layer. PBDT-TT-F strongly absorbs light in the wavelength range of 550-700 nm, but it absorbs relatively weakly in the range of 350-550 nm. In contrast, a P3HT film shows intensive absorption ability in the 450-600 nm region, suggesting that the absorptions of these two materials complement each other to give a broad range. An organic solar cell with the structure indium tin oxide （ITO）/poly（3,4-ethylenedioxythiophene）- polystyrenesulfonic acid （PEDOT：PSS）/P3HT/ PBDT-TT-F：[6,6]-phenyl C61-butyric acid methyl ester （PC61BM）/LiF/AI was fabricated in which P3HT was deposited between the hole transporting layer （PEDOT： PSS） and bulk heterojunction （BHJ） photoactive layer （PBDT-TT-F：PC61BM）. This solar cell exhibited improved spectrum response in the wavelength range of 450-600 nm compared with one without a P3HT layer, which is attributed to the photosensitizing effect of the P3HT film. Optimization of the thickness of P3HT led to an increase of short-circuit current density （Jsc） from 11.42 to 12.15 mA-cm-2.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2013年第8期1735-1744,共10页
Acta Physico-Chimica Sinica
基金
国家自然科学基金(91123034
61274056)
山西省科技创新重点团队(2012041011)资助项目~~
