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Research progress in anisotropic magnetoresistance 被引量:5

Research progress in anisotropic magnetoresistance
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摘要 Anisotropic magnetoresistance (AMR) is an important physical phenomenon that has broad application potential in many relevant fields. Thus, AMR is one of the most attractive research directions in material science to date. In this article, we summarize the recent advances in AMR, including traditional permalloy AMR, tunnel AMR, ballistic AMR, Coulomb blockade AMR, anomalous AMR, and antiferromagnetic AMR. The existing problems and possible challenges in developing more advanced AMR were briefly discussed, and future development trends and prospects were also speculated. Anisotropic magnetoresistance (AMR) is an important physical phenomenon that has broad application potential in many relevant fields. Thus, AMR is one of the most attractive research directions in material science to date. In this article, we summarize the recent advances in AMR, including traditional permalloy AMR, tunnel AMR, ballistic AMR, Coulomb blockade AMR, anomalous AMR, and antiferromagnetic AMR. The existing problems and possible challenges in developing more advanced AMR were briefly discussed, and future development trends and prospects were also speculated.
出处 《Rare Metals》 SCIE EI CAS CSCD 2013年第3期213-224,共12页 稀有金属(英文版)
基金 financially supported by the National Natural Science Foundation of China (Nos. 51071023 and 51101047) the Natural Science Foundation of Hainan Province (No. 512114) the Ph.D. Programs Foundation of Ministry of Education (No. 20120006130002) Program for Changjiang Scholars and Innovative Research Team in University
关键词 Anisotropic magnetoresistance Spin-orbitcoupling SPINTRONICS Anisotropic magnetoresistance Spin-orbitcoupling Spintronics
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  • 1蒋致诚.硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米[J].物理,2004,33(7):529-533. 被引量:6
  • 2LI Haifeng,MA Jidong,YU Guanghua,LONG Shibin,ZHAO Hongchen,ZHU Fengwu.Investigation on high magnetoresistance Ni_(0.81)Fe_(0.19) films grown on (Ni_(0.81)Fe_(0.19))_(1-x)Cr_(x) underlayers[J].Chinese Science Bulletin,2003,48(11):1087-1089. 被引量:1
  • 3蔡建旺,赵见高,詹文山,沈保根.磁电子学中的若干问题[J].物理学进展,1997,17(2):119-149. 被引量:49
  • 4Fitzsimmons M R, Silva T J, Crawford T M. Surface oxidation of permalloy thin films [ J ]. Phys. Rev. B, 2006, 73 ( 1 ) : 014420.
  • 5YuGH, ZhaoHC, LiMH, ZhuFW, LaiWY. Interfacereaction of Ta/Ni81 Fe19 or Ni81 Fe19/Ta and its suppression [ J]. Appl. Phys. Lett. , 2002 , 80(3) : 455.
  • 6Li K B, Wu Y H, Han G C, Qiu J J, Zheng Y K, Guo Z B, An L H, Luo P. Electrical and magnetic properties of nano-oxide added spin valves [J]. Thin Solid Film, 2006 , 505(1 -2) : 22
  • 7Fukuzawa H, Yuasa H, Hashimoto S, Iwasaki H, Tanaka Y. Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films [J] . Appl . Phys. Lett. , 2005, 87(8) : 082507.
  • 8Veloso A, Freitas P P, Wei P, Barradas N P, Soares J C, Almeida B, Sousa J B. Magnetoresistance enhancement in specular, bottom-pinned, Mn83 Ir17 spin valves with nano-oxide layers [ J ] . Appl. Phys. Lett. , 2000, 77(7) :1020.
  • 9Hong J, Lee Y, Lee M K, Song H J, Shin H J, Yoo Y, Suh J. Chemical states of Co and Fe in a specularly reflective oxide layer in spin valves [ J]. Appl. Phys. Lett., 2003, 83 (23) : 4803.
  • 10Lin T, Mauri D. Effects of oxide seed and cap layers on mag-netic properties of a synthetic spin valve [ J ]. Appl. Phys. Lett. , 2001, 78(15) : 2181.

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  • 1Sheng, Shu, Li, Wei, Li, Minghua, Yu, Guanghua.Investigation on interface of NiFeCr/NiFe/Ta films with high magnetic field sensitivity[J].Rare Metals,2012,31(1):22-26. 被引量:6
  • 2张毅刚.虚拟仪器技术介绍[J].国外电子测量技术,2006,25(6):1-6. 被引量:90
  • 3Hung T Q, Oh S, Sinha B. High field-sensitivity planar Hall sensor based on NiFe/Cu/IrMn trilayer structure [J]. Journal of Applied Physics, 2010, 107(9) : 09E715.
  • 4Perssona A, Bejhedb R S, Nguyena H, Gunnarssonb K, Dalsletc B T, Hansenc M F, Svedlindhb P. low-frequen- cy noise in planar Hall effect bridge sensors [ J ]. Sensors and Actuators A: Physical, 2011, 171(2) : 212.
  • 5Fluitman J H. Applicability of the planar Hall effect [J]. Journal of Applied Physics, 1981, 52(3) : 2468.
  • 6Schuhl A, Nguyen Van Dau F, Childress J R. Low- field magnetic sensors based on the planar Hall effect [J]. Applied Physics Letters, 1995, 66(20): 2751.
  • 7Zhao Z D, Li M H, Kang P, Zhao C J, Zhang J Y,Zhou L J, Zhao Y C, Jiang S L, Yu G H. The influ- ence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments [ J ]. Applied Surface Science, 2015, 332: 710.
  • 8Montaigne F, Schuhl A, Nguyen Van Dau F. Develop- ment of magnetoresistive sensors based on planar Hall effect for applications to microcompass [ J]. Sensors and Actuators A: Physical, 2000, 81(1): 324.
  • 9Thanha N T, Kima K W, Kim C O. Microbeads detec- tion using planar Hall effect in spin-valve structure [J]. Journal of Magnetism and Magnetic Materials, 2007, 316 (2) : e238.
  • 10Thanh N T, Rao B P, Duc N H. Planar Hall resist- ance sensor for biochip application [ J]. Physical Status Solidi (a), 2007, 204(12):4053.

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