摘要
The magneto-optical Kerr effect of the HfO2/Co/HfO2/A1 multilayer structure is investigated in this work, and an ob- vious cavity enhancement of the Kerr response for the HfO2 semiconductor is found both theoretically and experimentally. Surprisingly, a maximum value of about -3 of the polar Kerr rotation for s-polarized incident light is observed in our experiment. We propose that this improvement on the Kerr effect can be attributed to the multiple reflection and optical interference in the cavity, which can also be proved by simulation using the finite element method.
The magneto-optical Kerr effect of the HfO2/Co/HfO2/A1 multilayer structure is investigated in this work, and an ob- vious cavity enhancement of the Kerr response for the HfO2 semiconductor is found both theoretically and experimentally. Surprisingly, a maximum value of about -3 of the polar Kerr rotation for s-polarized incident light is observed in our experiment. We propose that this improvement on the Kerr effect can be attributed to the multiple reflection and optical interference in the cavity, which can also be proved by simulation using the finite element method.
基金
supported by the National Key Project of Fundamental Research of China(Grant Nos.2012CB932304 and 2010CB923404)
the National Natural Science Foundation of China(Grant Nos.50971070 and U1232210)
the Priority Academic Program Development of Jiangsu Higher Education Institutions
