摘要
使用RF-PECVD法分别在基底温度为60℃、120℃和200℃的N型单晶锗表面制备了α-C:H膜,采用拉曼光谱、傅里叶变换红外吸收光谱和原子力显微镜等技术手段研究分析了α-C:H膜的价键组成及表面形貌,讨论了基底温度对α-C:H膜微结构及部分性能的影响。结果表明,在α-C:H膜沉积过程中,基底温度对膜层微观结构有较大影响,基底温度60℃时,膜层表面光滑、致密无石墨化现象。随着基底温度的升高,α-C:H膜中含H量和微晶石墨量逐渐增多,α-C:H膜层性能也逐步退化。
α-C： H coatings have been deposited on N type Ge single crystal with suhstrate temperature of 60℃, 120℃ and 200 ℃ successfully by using RF-PECVD method. The bonding structure and microphotograph of α-C： H coatings have been investigated by Raman spectroscopy, FTIR spectroscopy and AFM. The effects of substrate temperature on microstructure and properties of α-C.. H coatings have been discussed and analyzed. The results show that substrate temperature has signifi- cant effects on microstructure and properties. When substrate temperature is 60 ℃, α-C： H coating with lowest roughness and micro-graphite crystalline with highest densification are obtained. As the substrate temperature rising, the content of H and micro-graphite crystalline in α-C： H coatings increase gradually. And the properties of α-C： H coating also degrade with the increasing of substrate temperature.
出处
《光学与光电技术》
2013年第4期95-98,共4页
Optics & Optoelectronic Technology
