摘要
针对ＧａＡｓ ＭＥＳＦＥＴ在微波频率的应用中的射频过驱动导致高栅电流密度现象，设计了Ｔｉａｌ栅和ＴｉＰｔＡｕ栅ＧａＡｓ ＭＥＳＦＥＴ的高温正向大电流试验，通过对试验数据和试验样品的扫描电镜静态电压衬度像以及试验中的失效样品进行分析，确定了栅寄生并联电阻的退化是导致器件的跨导ｇｍ、栅反向漏电流Ｉｓ、夹断电压Ｖｐ等特性退化，甚至导致器件烧毁失效的主要原因。
To simulate a phenomena of high gate - current density which is arised by RF overdrive of GaAs MESFET, a High Temperature Forward Large Current Test (HTFLCT) of TiAl and TiPtAu gate GaAs MESFET was designed. Though the analysis of test data and failure samples, the main cause of degradation of the transconductance (gm), reverse gate leakage current (Is), pinch off voltage (Vp) and device burn out have been established. It is shunt resistance degradation of gate.
出处
《电子产品可靠性与环境试验》
2000年第6期25-29,共5页
Electronic Product Reliability and Environmental Testing
