摘要
在铜互连超大规模集成电路(ULSI)中,由于铜和钽的物理化学性质的差异造成两者的去除速率不同,导致布线晶圆表面抛光后出现碟形坑等缺陷。针对该问题,研究了盐酸胍(CH5N3·HCl)对Cu和Ta去除速率选择性的影响。根据Cu和Ta的CMP机理,通过在有氧化剂和无氧化剂环境下的实验对比,以及不同质量分数的盐酸胍对Cu和Ta去除速率选择性的影响,对盐酸胍在钽CMP中的作用进行了定性和定量分析,确定并优化了盐酸胍及氧化剂的含量,使钽的去除速率快于铜的去除速率。应用上述抛光液对300mm布线晶圆进行阻挡层抛光实验,通过对碟形坑的检测,证明了该种抛光液能够高速、有效地修正碟形坑。
In ultra large scale integration （ULSI） circuits with the copper interconnection, the surface topography suffers from the dishing pit and other defects caused by the difference of the removal rate between copper and tantalum, which is due to their different chemical and physical properties. To solve the problem, the effects of guanidine hydrochloride （CHsN3 ~ HC1） on the removal rate selectivities of copper and tantalum were studied. Based on the CMP mechanisms of copper and tantalum, through the experiment comparison between the oxidation-containing and oxidation-free condition and the effects of different mass fractions of guanidine hydrochloride on the removal rate selectivities of copper and tantalum, the quantitative and qualitative analyses about the effect of guanidine hydrochloride on the CMP were made. The concentrations of guani- dine hydrochloride and oxidation were confirmed and optimized in order to make the polishing rate of tantalum faster than that of copper. The barrier polishing experiment for a 300 mm pattern wafer was performed using the slurry with guanidine hydrochloride and oxidation. It is proved that the slurry with guanidine hydrochloride and oxidation has a high-speed and effective correc- tion for the dishing pit through the dishing detection during the experiment.
出处
《微纳电子技术》
CAS
北大核心
2013年第9期586-591,共6页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
