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等离子体尺寸对放电极紫外光源影响 被引量:4

Influence of plasma size on discharge extreme ultraviolet source
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摘要 计算了放电等离子体极紫外光刻光源中,不同等离子体长度条件下的收集效率,实验上研究了等离子体长度对Xe气放电极紫外辐射的影响。结合本系统光学收集系统设计参数和理论计算结果,给出了不同等离子体长度条件下中间焦点处13.5nm(2%带宽)光功率。结果表明等离子体长度为3~6mm时毛细管光源中间焦点光功率和尺寸最优。 The plasma size has important influence on the power of the extreme ultraviolet source at the intermediate focus (IF point) and the design of the illumination system for a capillary discharge extreme ultraviolet source. The collection efficiency was calculated under different lengths of the plasma theoretically. Moreover, the spectra of the Xe plasma under different lengths of the plasma were obtained by a Rowland spectrometer. By combining the theoretical and experimental results with the design of the collectors in this system, the 13.5 nm (2~ bandwidth) emissions at the IF point were calculated under different lengths of the plasma. The results show that the optimal power at the IF point and the optimal size of the plasma can be obtained when the length of the plasma is 3-6 mm.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2013年第10期2631-2635,共5页 High Power Laser and Particle Beams
基金 国家自然科学基金重点项目(60838005) 国家科技重大专项(2008ZX02501)
关键词 极紫外光刻光源 毛细管放电 Xe等离子体 13 5 nm辐射 Z箍缩 extreme ultraviolet source capillary diseharge Xe plasma 13.5 nm emission Z pinch
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  • 1Stulen R H, Sweeney D W. Extreme ultraviolet lithography[J]. IEEEJournal of Quantum Electronics, 1999, 35(5):694-699.
  • 2Silfvast W T. Intense EUV incoherent plasma sources for EUV lithography and other applications[J]. IEEEJournal of Quantum Electronics, 1999, 35(5):700-708.
  • 3Ben-Kish A. EUV lithography research program at ASET[C]//Proc of SPIE. 1999, 3676:238-245.
  • 4Stature U, Kleinschmidt J, Gaebel K M, et al. High-power sources for EUV lithography: state of the art[C]//Proc of SPIE. 2004, 5448: 722-736.
  • 5Zhang C H, Katsuki S, Akiyama H. EUV emission from gas discharge produced plasmas and solid tin as target[J]. Journal of Physics D Applied Physics, 2005, 38(23) :4191-4195.
  • 6Schriever G, Rahe M, Stamm U, et al. Compact Z-pinch EUV source for photolithography[C]//Proc of SPIE. 1999, 4343:615-620.
  • 7Neff W, Bergmann K, Rosier O, et al. Pinch plasma radiation sources for the extreme ultraviolet[J]. Contributions to Plasma Physics, 2001, 41(6) :589-597.
  • 8Mohanty S R, Robert E, Dussart R, et al. A novel fast capillary discharge system emitting intense EUV radiation: possible source for EUV lithography[J]. Microelectronic Engineering, 2003, 65 : 47-59.
  • 9Song I, Kobayashi Y, Sakamoto T, et al. Performance of gas jet type Z-pinch plasma light source for EUV lithography[J]. Microelectronic Engineering, 2006, 83 : 710-713.
  • 10Teramoto Y, Narihiro Z, Yamatani D, et al. Development of Sn-fueled high-power DPP EUV source for enabling HVM[C]//Proc of SPIE. 2007, 65173R.

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  • 1H Meiling, W de Boeij, F Bornebroek, et al..From performance validation to volume introduction of ASML′s NXE platform [C].SPIE, 2012, 8322: 83221G.
  • 2M Lowisch, P Kuerz, O Conradi, et al..Optics for ASML′s NXE:3300B platform [C].SPIE, 2013, 8679: 86791H.
  • 3M Goldstein, R Hudyma, P Naulleau, et al..Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography [J].Opt Lett, 2008, 33(24): 2995.
  • 4H Glatzel, D Ashworth, M Bremer, et al..Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5 [C].SPIE, 2013, 8679: 867917.
  • 5E Tejnil, K A Goldberg, J Bokor.Phase effects owing to multilayer coatings in a two-mirror extreme-ultraviolet schwarzschild objective [J].Appl Opt, 1998, 37(34): 8021-8029.
  • 6C Liang, M R Descour, J M Sasian, et al..Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics [J].Appl Opt, 2001, 40(1): 129-135.
  • 7S Edlou, L Sun, C Synborski.Coating induced phase aberration in a Schwarzschild objective [C].SPIE, 2008, 7067: 706709.
  • 8ORA.Defining Coating and Cement Data [CP].in Code V Electronic Document Library, Optical Research Associates, 2009, Vol.II: 7-28-7-29.
  • 9ZEMAX.Defining coatings in ZEMAX [CP].in ZEMAX Optical Design Program User′s Guide, ZEMAX Development Corporation, 2009, Ch.20: 583-597.
  • 10M F Bal, M Singh, J J M Braat.Optimization of multilayer reflectors for extreme ultraviolet lithography [J].J Micro/Nanolith MEMS MOEMS, 2004, 3(4): 537-544.

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