摘要
ZnO作为宽禁带透明半导体材料在光电领域具有广阔应用前景,通过掺杂可改善其光电性能。本文从第一性原理理论计算和实验方面综述了掺杂对ZnO溶胶凝胶薄膜光电特性影响的最新进展。III、IV族及稀土元素掺杂可在ZnO导带底引入大量载流子,使费米能级进入导带,利于n型导电。I、IB族或V族元素掺杂可替代Zn或O原子位置,产生受主杂质能级,增加受主浓度,利于p型导电。单掺杂ZnO薄膜电阻率较高,共掺杂可提高杂质溶解度,减少自补偿作用,提高p型导电性。元素掺杂可调整ZnO带隙且与掺杂元素氧化物的带隙相关,Mg、Al、Ga、In掺杂使带隙增大,Cd掺杂则使带隙减小。指出需进一步探究掺杂ZnO薄膜的缺陷与能级结构,开展ZnO纳米晶和基于ZnO的多元复合薄膜研究等。
The latest progress, in the first-principle calculations and experimental characterizations of the sol-gel ZnO thin film modified by doping, was tentatively reviewed. The discussions focused on the four topics. I）. The doping of the element of groups III,IV,and rare-earth significantly improves the n-type conductivity,because the doped-atom introduces a large number of charge-carrier to the bottom of ZnO conduction band, moving Fermi level up into the conduction band. II）. The doping of the element of groups I, IB, or V enhances the p-type conductivity, because the doped atoms re- place some Zn and O sites, introduce acceptor levels and increase the acceptor concentration. III）. The doping of single species associates with a high resistivity, while co-doping of two different species increases the p-type conduCtivity, possi- bly because of an increase of impurity solubility and a reduction of self-compensation. IV）. The ZnO band gap can be tailored by doping,or correlated to the oxide＇s band-gap of the doped impurity.For example,the doping of Mg,A1, Ga, and In widens the ZnO band-gap, but the doping of Cd narrows the band-gap.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2013年第10期955-963,共9页
Chinese Journal of Vacuum Science and Technology
基金
中央高校基本科研业务费资助项目(N110403001)
关键词
ZNO薄膜
掺杂
光电特性
溶胶凝胶法
ZnO thin film, Doping, Optical-electrical properties, Sol-gel method
