摘要
横向超结双扩散MOS(SJ-LDMOS)的性能优越,在高压集成电路和功率集成电路中具有广阔的应用前景,而衬底辅助耗尽效应是制约横向超结功率器件性能的重要因素之一。分析了SJ-LDMOS衬底辅助耗尽效应的产生机理,总结了当前国内外消除SJ-LDMOS衬底辅助耗尽效应的技术,比较了各种技术的比导通电阻与击穿电压的关系。最后,从设计技术、工艺及理论模型三个方面,对横向超结器件的发展方向进行了展望。
Due to its superior performance, super junction lateral double-diffused MOSFET （SJ-LDMOS） is becoming a promising device for application in high-voltage and power ICs. However, substrate-assisted depletion （SAD） effect is one of key problems, which restricts the performance of SJ-LDMOS. Physical mechanism of SAD effect in SJ-LDMOS was analyzed. Technologies to solve the problem were summarized, and tradeoffs between specific on-resistance and breakdown voltage were compared. Finally, the development trend of lateral super junction devices was viewed in terms of structure design, fabrication process and theoretical model.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第4期586-592,共7页
Microelectronics
基金
国家自然科学基金资助项目(60806027
61076073)
电子薄膜与集成器件国家重点实验室基金资助项目(KFJJ201011)
